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aft18h357--24sr6 1 rf device data freescale semiconductor, inc. rf power ldmos transistor n--channel enhancement--mode lateral mosfet this 63 w asymmetrical doherty rf power ldmos transistor is designed for cellular base station applications covering the frequency range of 1805 to 1995 mhz. 1800 mhz ? typical doherty single--carrier w--cdma performance: v dd =28vdc, i dqa = 800 ma, v gsb =0.7vdc,p out = 63 w avg., input signal par = 9.9 db @ 0.01% probability on ccdf. g ps (db) ? d (%) output par (db) acpr (dbc) 1805 mhz 17.3 50.3 7.8 --34.6 1840 mhz 17.5 49.7 7.9 --37.4 1880 mhz 17.4 50.3 7.8 --37.6 1900 mhz ? typical doherty single--carrier w--cdma performance: v dd =28vdc, i dqa = 800 ma, v gsb =0.4vdc,p out = 63 w avg., input signal par = 9.9 db @ 0.01% probability on ccdf. frequency g ps (db) ? d (%) output par (db) acpr (dbc) 1930 mhz 17.0 49.1 7.7 --34.6 1960 mhz 17.1 48.9 7.6 --37.4 1995 mhz 17.0 49.1 7.4 --37.6 features ? advanced high performance in--package doherty ? greater negative gate--source voltage range for improved class c operation ? designed for digital predistortion error correction systems ? in tape and reel. r6 suffix = 150 units, 56 mm tape width, 13--inch reel. document number: aft18h357--24s rev. 0, 3/2014 freescale semiconductor technical data 1805?1995 mhz, 63 w avg., 28 v airfast rf power ldmos transistor aft18h357--24sr6 ni--1230s--4l2l (top view) rf outa /v dsa rf outb /v dsb rf ina /v gsa rf inb /v gsb vbw a (1) 6 3 15 24 carrier peaking figure 1. pin connections vbw b (1) 1. device cannot operate with the v dd current supplied through pin 3 and pin 6. ? freescale semiconductor, inc., 2014. a ll rights reserved.
2 rf device data freescale semiconductor, inc. aft18h357--24sr6 table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +65 vdc gate--source voltage v gs --6.0, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg --65 to +150 ? c case operating temperature range t c --40 to +150 ? c operating junction temperature range (1,2) t j --40 to +225 ? c cw operation @ t c =25 ? c derate above 25 ? c cw 378 3.24 w w/ ? c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 79 ? c, 63 w w--cdma, 28 vdc, i dqa = 800 ma, v gsb = 0.7 vdc, 1840 mhz r ? jc 0.43 ? c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2 machine model (per eia/jesd22--a115) iv charge device model (per jesd22--c101) b table 4. electrical characteristics (t a =25 ? c unless otherwise noted) characteristic symbol min typ max unit off characteristics (4) zero gate voltage drain leakage current (v ds =65vdc,v gs =0vdc) i dss ? ? 10 ? adc zero gate voltage drain leakage current (v ds =28vdc,v gs =0vdc) i dss ? ? 1 ? adc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 1 ? adc on characteristics -- side a (4) gate threshold voltage (v ds =10vdc,i d = 140 ? adc) v gs(th) 0.8 1.2 1.6 vdc gate quiescent voltage (v dd =28vdc,i da = 800 madc, measured in functional test) v gsa(q) 1.4 1.8 2.2 vdc drain--source on--voltage (v gs =10vdc,i d =1.4adc) v ds(on) 0.1 0.15 0.3 vdc on characteristics -- side b (4) gate threshold voltage (v ds =10vdc,i d = 240 ? adc) v gs(th) 0.8 1.2 1.6 vdc drain--source on--voltage (v gs =10vdc,i d =2.4adc) v ds(on) 0.1 0.15 0.3 vdc 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. 4. each side of device measured separately. (continued)
aft18h357--24sr6 3 rf device data freescale semiconductor, inc. table 4. electrical characteristics (t a =25 ? c unless otherwise noted) (continued) characteristic symbol min typ max unit functional tests (1,2) (in freescale doherty test fixture, 50 ohm system) v dd =28vdc,i dqa = 800 ma, v gsb =0.7v, p out = 63 w avg., f = 1805 mhz, single--carrier w--cdma, iq magnit ude clipping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ ? 5mhzoffset. power gain g ps 16.6 17.3 19.6 db drain efficiency ? d 47.4 50.3 ? % output peak--to--average ratio @ 0.01% probability on ccdf par 7.4 7.8 ? db adjacent channel power ratio acpr ? --34.6 --32.0 dbc load mismatch (in freescale test fixture, 50 ohm system) i dqa = 800 ma, f = 1840 mhz, 10 ? sec pulse width, 10% duty cycle vswr 10:1 at 32 vdc, 360 w pulse output power (3 db input overdrive from 210 w pulse rated power) no device degradation typical performance (2) (in freescale doherty test fixture, 50 ohm system) v dd =28vdc,i dqa = 800 ma, v gsb =0.7vdc, 1805?1880 mhz bandwidth p out @ 1 db compression point, cw p1db ? 220 ? w p out @ 3 db compression point (3) p3db ? 320 ? w am/pm (maximum value measured at the p3db compression point across the 1805--1880 mhz bandwidth) ? ? -- 1 5 ? ? vbw resonance point (imd third order intermodulation inflection point) vbw res ? 110 ? mhz gain flatness in 75 mhz bandwidth @ p out =63wavg. g f ? 0.2 ? db gain variation over temperature (--30 ? cto+85 ? c) ? g ? 0.008 ? db/ ? c output power variation over temperature (--30 ? cto+85 ? c) (4) ? p1db ? 0.009 ? db/ ? c 1. part internally matched both on input and output. 2. measurements made with device in an a symmetrical doherty configuration. 3. p3db = p avg + 7.0 db where p avg is the average output power measured using an uncli pped w--cdma single--carrier input signal where output par is compressed to 7.0 db @ 0.01% probability on ccdf. 4. exceeds recommended operating conditions. see cw operation data in maximum ratings table.
4 rf device data freescale semiconductor, inc. aft18h357--24sr6 figure 2. aft18h357--24sr6 test ci rcuit component l ayout ? 1805?1880 mhz -- -- aft18h357--24s rev. 6 c1 d55983 c9 r1 c p r2 c5 c17 c18 c6 z1 r3 c19 c2 c10 c16 c14 c4 c22 c12 c8 c20 c7 c21 c3 c13 c15 c11 v dda v ddb v gga v ggb cut out area table 5. aft18h357--24sr6 test circuit c omponent designations and values ? 1805?1880 mhz part description part number manufacturer c1, c2, c3, c4 20 pf chip capacitors atc600f200jt250xt atc c5, c6 12 pf chip capacitors atc600f120jt250xt atc c7, c8 8.2 pf chip capacitors atc600f8r2jt250xt atc c9, c10, c11, c12, c13, c14 10 ? f chip capacitors c5750x7s2a106k230kb tdk c15, c16 220 ? f, 63 v electrolytic capacitors sk063m0220b5s-1015 yageo c17 0.8 pf chip capacitor atc600f0r8bt250xt atc c18 0.9 pf chip capacitor atc600f0r9bt250xt atc c19 1.2 pf chip capacitor atc600f1r2bt250xt atc c20 0.2 pf chip capacitor atc600f0r2bt250xt atc c21, c22 2.2 ? f chip capacitors c3225x7r2a225kt tdk r1, r2 2.2 ? , 1/4 w chip resistors crcw12062r20jnea vishay r3 50 ? , 10 w chip resistor cw12010t0050gbk atc z1 1700--2000 mhz band 90 ? , 5 db directional coupler x3c19p1--05s anaren pcb rogers ro4350b, 0.020 ? , ? r =3.66 d55983 mtl
aft18h357--24sr6 5 rf device data freescale semiconductor, inc. typical characteris tics ? 1805?1880 mhz -- 2 . 6 -- 1 . 8 -- 2 -- 2 . 2 -- 2 . 4 -- 2 . 8 1760 acpr f, frequency (mhz) figure 3. single--carrier output peak--to--average ratio compression (parc) broadband performance @ p out = 63 watts avg. 16.9 17.9 17.8 17.7 -- 4 0 53 52 51 50 -- 3 0 -- 3 2 -- 3 4 -- 3 6 ? d , drain efficiency (%) ? d g ps , power gain (db) 17.6 17.5 17.4 17.3 17.2 17.1 17 1780 1800 1820 1840 1860 1880 1900 1920 49 -- 3 8 acpr (dbc) parc figure 4. intermodulation distortion products versus two--tone spacing two--tone spacing (mhz) 10 -- 7 5 0 -- 1 5 -- 3 0 -- 6 0 1 300 imd, intermodulatio n distortion (dbc) -- 4 5 im3--u im5--u im5--l im7--l im7--u v dd =28vdc,p out = 32 w (pep), i dqa = 800 ma, v gsb =0.7vdc two--tone measurements, (f1 + f2)/2 = center frequency of 1840 mhz figure 5. output peak--to--average ratio compression (parc) versus output power p out , output power (watts) -- 1 -- 3 35 0 -- 2 -- 4 output compression at 0.01% probability on ccdf (db) 20 50 65 110 30 60 55 50 45 40 35 ? d ? drain efficiency (%) -- 3 d b = 8 5 w 80 ? d acpr parc acpr (dbc) -- 4 3 -- 3 1 -- 3 3 -- 3 5 -- 3 9 -- 3 7 -- 4 1 18 g ps , power gain (db) 17.8 17.6 17.4 17.2 17 16.8 g ps -- 1 d b = 4 0 w -- 2 d b = 6 3 w irl parc (db) -- 5 g ps im3--l 1 v dd =28vdc,i dqa = 800 ma, v gsb =0.7vdc f = 1840 mhz, single--carrier w--cdma 3.84 mhz channel bandwidth, input signal par = 9.9 db @ 0. 01% probab ility on ccdf 100 95 v dd =28vdc,p out =63w(avg.),i dqa = 800 ma v gsb = 0.7 vdc, single--carrier w--cdma, 3.84 mhz channel bandwidth, input signal par = 9.9 db @ 0.01% pr obabilit y on ccdf
6 rf device data freescale semiconductor, inc. aft18h357--24sr6 typical characteris tics ? 1805?1880 mhz 1 g ps acpr p out , output power (watts) avg. figure 6. single--carrier w--cdma power gain, drain efficiency and acpr versus output power -- 1 0 -- 2 0 10 22 0 60 50 40 30 20 ? d , drain efficiency (%) ? d g ps , power gain (db) 20 18 10 100 400 10 -- 6 0 acpr (dbc) 16 14 12 -- 3 0 -- 4 0 -- 5 0 figure 7. broadband frequency response 12 18 f, frequency (mhz) v dd =28vdc p in =0dbm i dqa = 800 ma v gsb =0.7vdc 16 15 14 gain (db) 17 13 1620 1680 1740 1800 1860 1920 1980 2040 2100 gain 1880 mhz -- 7 0 1840 mhz 1840 mhz 1805 mhz 1880 mhz 1805 mhz 1805 mhz 1840 mhz 1880 mhz v dd =28vdc,i dqa = 800 ma v gsb = 0.7 vdc, single--carrier w--cdma, 3.84 mhz channel bandwidth input signal par = 9.9 db @ 0.01% probabilit y on ccdf
aft18h357--24sr6 7 rf device data freescale semiconductor, inc. table 6. carrier side load pull performance ? maximum power tuning v dd =28vdc,i dqa = 789 ma , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max output power p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1805 1.22 - j3.38 1.25 + j3.43 1.64 - j4.15 19.7 51.8 152 57.3 -10 1840 1.37 - j3.43 1.38 + j3.55 1.62 - j4.36 19.6 51.8 152 57.2 -10 1880 1.67 - j3.79 1.73 + j3.78 1.58 - j4.51 19.5 51.8 151 56.7 -11 f (mhz) z source ( ? ) z in ( ? ) max output power p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1805 1.22 - j3.38 1.15 + j3.61 1.57 - j4.42 17.4 52.6 183 58.2 -16 1840 1.37 - j3.43 1.29 + j3.76 1.54 - j4.59 17.3 52.6 182 57.8 -16 1880 1.67 - j3.79 1.66 + j4.07 1.57 - j4.80 17.3 52.6 181 57.2 -16 (1) load impedance for optimum p1db power. (2) load impedance for optimum p3db power. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. table 7. carrier side load pull performance ? maximum drain efficiency tuning v dd =28vdc,i dqa = 789 ma , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1805 1.22 - j3.38 1.17 + j3.55 3.59 - j2.59 22.4 49.7 93 69.0 -18 1840 1.37 - j3.43 1.29 + j3.65 3.16 - j2.97 22.1 50.0 101 68.2 -17 1880 1.67 - j3.79 1.65 + j3.89 3.06 - j3.13 22.1 50.0 100 67.5 -17 f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1805 1.22 - j3.38 1.07 + j3.65 3.22 - j3.06 20.0 50.9 122 69.5 -24 1840 1.37 - j3.43 1.19 + j3.80 3.07 - j3.01 20.1 50.7 117 68.5 -24 1880 1.67 - j3.79 1.55 + j4.11 3.00 - j3.18 20.0 50.7 117 67.4 -24 (1) load impedance for optimum p1db efficiency. (2) load impedance for optimum p3db efficiency. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. input load pull tuner and test circuit device under test z source z in z load output load pull tuner and test circuit
8 rf device data freescale semiconductor, inc. aft18h357--24sr6 table 8. peaking side load pull performance ? maximum power tuning v dd =28vdc,v gsb =0.8vdc , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max output power p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1805 0.831 - j3.07 0.799 + j3.11 1.82 - j4.08 16.2 54.1 254 58.0 -30 1840 1.13 - j3.28 0.919 + j3.29 1.90 - j4.32 16.2 54.1 259 58.3 -28 1880 1.40 - j3.52 1.27 + j3.61 2.01 - j4.58 16.2 54.1 257 57.8 -29 f (mhz) z source ( ? ) z in ( ? ) max output power p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1805 0.831 - j3.07 0.787 + j3.23 1.84 - j4.35 14.0 54.7 297 58.6 -37 1840 1.13 - j3.28 0.938 + j3.44 1.98 - j4.65 14.0 54.8 301 58.8 -35 1880 1.40 - j3.52 1.34 + j3.82 2.12 - j4.91 14.0 54.8 299 58.0 -36 (1) load impedance for optimum p1db power. (2) load impedance for optimum p3db power. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. table 9. peaking side load pull performance ? maximum drain efficiency tuning v dd =28vdc,v gsb =0.8vdc , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1805 0.831 - j3.07 0.685 + j3.07 3.94 - j2.16 17.7 52.2 165 71.2 -37 1840 1.13 - j3.28 0.768 + j3.24 3.51 - j1.93 17.6 52.1 162 71.2 -36 1880 1.40 - j3.52 1.03 + j3.55 3.00 - j1.81 17.6 51.9 155 71.2 -38 f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1805 0.831 - j3.07 0.725 + j3.21 3.80 - j2.97 15.5 53.3 212 70.8 -45 1840 1.13 - j3.28 0.837 + j3.41 3.62 - j2.72 15.5 53.2 208 70.7 -44 1880 1.40 - j3.52 1.19 + j3.79 3.32 - j2.95 15.5 53.4 220 70.5 -44 (1) load impedance for optimum p1db efficiency. (2) load impedance for optimum p3db efficiency. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. input load pull tuner and test circuit device under test z source z in z load output load pull tuner and test circuit
aft18h357--24sr6 9 rf device data freescale semiconductor, inc. p1db -- typical carrier side load pull contours ? 1840 mhz -- 7 -- 1 -- 2 imaginary ( ? ) 22.5 16 -- 3 4.5 1.5 -- 4 -- 5 3.5 4 3 -- 6 55.5 -- 7 -- 1 -- 2 imaginary ( ? ) 22.5 16 -- 3 4.5 1.5 -- 4 -- 5 3.5 4 3 -- 6 55.5 -- 7 -- 1 -- 2 imaginary ( ? ) 22.5 16 -- 3 4.5 1.5 -- 4 -- 5 3.5 4 3 -- 6 55.5 note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 8. p1db load pull output power contours (dbm) real ( ? ) -- 7 -- 1 -- 2 imaginary ( ? ) 22.5 16 -- 3 4.5 1.5 figure 9. p1db load pull efficiency contours (%) real ( ? ) figure 10. p1db load pull gain contours (db) real ( ? ) -- 4 -- 5 3.5 4 3 -- 6 55.5 figure 11. p1db load pull am/pm contours ( ? ) real ( ? ) e p 48.5 48 49 49.5 50 50.5 51 51.5 60 58 56 54 52 e p 62 64 66 p e 19.5 20 20.5 21 21.5 22 22.5 23 e p -- 1 2 -- 1 6 -- 1 8 -- 2 0 -- 2 4 -- 8 -- 1 0 -- 1 4 -- 2 2 68
10 rf device data freescale semiconductor, inc. aft18h357--24sr6 p3db -- typical carrier side load pull contours ? 1840 mhz -- 7 -- 1 -- 2 imaginary ( ? ) 22.5 16 -- 3 4.5 1.5 -- 4 -- 5 3.5 4 3 -- 6 55.5 -- 7 -- 1 -- 2 imaginary ( ? ) 22.5 16 -- 3 4.5 1.5 -- 4 -- 5 3.5 4 3 -- 6 55.5 -- 7 -- 1 -- 2 imaginary ( ? ) 22.5 16 -- 3 4.5 1.5 -- 4 -- 5 3.5 4 3 -- 6 55.5 note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 12. p3db load pull output power contours (dbm) real ( ? ) -- 7 -- 1 -- 2 imaginary ( ? ) 22.5 16 -- 3 4.5 1.5 figure 13. p3db load pull efficiency contours (%) real ( ? ) figure 14. p3db load pull gain contours (db) real ( ? ) -- 4 -- 5 3.5 4 3 -- 6 55.5 figure 15. p3db load pull am/pm contours ( ? ) real ( ? ) e p 48.5 49 49.5 50 50.5 51 51.5 52 52.5 60 58 54 52 62 e p 56 64 66 68 p e 17 17.5 18 18.5 19 19.5 20 20.5 21 e p -- 1 4 -- 1 6 -- 1 8 -- 2 0 -- 2 4 -- 2 6 -- 2 2 -- 2 8 -- 3 0
aft18h357--24sr6 11 rf device data freescale semiconductor, inc. p1db -- typical peaking side load pull contours ? 1840 mhz note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 16. p1db load pull output power contours (dbm) real ( ? ) imaginary ( ? ) 2 17 figure 17. p1db load pull efficiency contours (%) real ( ? ) figure 18. p1db load pull gain contours (db) real ( ? ) 4 3 5 figure 19. p1db load pull am/pm contours ( ? ) real ( ? ) 60 58 56 e p 62 64 66 6 -- 6 -- 1 -- 2 imaginary ( ? ) 2 17 -- 3 -- 4 -- 5 4 3 56 imaginary ( ? ) imaginary ( ? ) 2 17 4 3 56 0 -- 6 -- 1 -- 2 -- 3 -- 4 -- 5 0 e p 50 50.5 51 51.5 52 52.5 53 53.5 54 68 70 56 2 17 4 3 56 -- 6 -- 1 -- 2 -- 3 -- 4 -- 5 0 p e 14.5 14 15 15.5 16 16.5 17 17.5 -- 6 -- 1 -- 2 -- 3 -- 4 -- 5 0 e p -- 3 2 -- 3 6 -- 3 8 -- 4 2 -- 3 0 -- 3 4 -- 4 0 -- 2 8 53
12 rf device data freescale semiconductor, inc. aft18h357--24sr6 p3db -- typical peaking side load pull contours ? 1840 mhz note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 20. p3db load pull output power contours (dbm) real ( ? ) imaginary ( ? ) 2 17 figure 21. p3db load pull efficiency contours (%) real ( ? ) figure 22. p3db load pull gain contours (db) real ( ? ) 4 3 5 figure 23. p3db load pull am/pm contours ( ? ) real ( ? ) 6 -- 6 -- 1 -- 2 imaginary ( ? ) 2 17 -- 3 -- 4 -- 5 4 3 56 imaginary ( ? ) imaginary ( ? ) 2 17 4 3 56 0 -- 6 -- 1 -- 2 -- 3 -- 4 -- 5 0 2 17 4 3 56 -- 6 -- 1 -- 2 -- 3 -- 4 -- 5 0 -- 6 -- 1 -- 2 -- 3 -- 4 -- 5 0 60 58 e p 62 64 66 68 70 e p 51 51.5 52 52.5 53 53.5 54 54.5 56 54 p e 14.5 15 15.5 12 14 12.5 13 13.5 e p -- 3 2 -- 3 6 -- 3 8 -- 4 2 -- 3 4 -- 4 0 -- 4 4 -- 4 6 -- 4 8 54 62 58
aft18h357--24sr6 13 rf device data freescale semiconductor, inc. alternate characteriz ation ? 1930?1995 mhz -- -- aft18h357--24s rev. 6 d55813 v dda v ddb v gga v ggb c1 c p r1 c9 r2 c5 c17 c18 c6 z1 r3 c2 c10 c16 c14 c12 c8 c4 c19 c7 c3 c11 c13 c15 figure 24. aft18h357--24sr6 test circ uit component layout ? 1930--1995 mhz cut out area table 10. aft18h357--24sr6 test circuit com ponent designations and values ? 1930--1995 mhz part description part number manufacturer c1, c2, c3, c4 15 pf chip capacitors atc600f150jt250xt atc c5, c6, c8 8.2 pf chip capacitors atc600f8r2jt250xt atc c7 3.9 pf chip capacitor atc600f3r9jt250xt atc c9, c10, c11, c12, c13, c14 10 ? f chip capacitors c5750x7sa106k230kb tdk c15, c16 220 ? f, 63 v electrolytic capacitors sk063m0220b5s-1015 yageo c17, c19 0.2 pf chip capacitors atc600f0r2bt250xt atc c18 0.9 pf chip capacitor atc600f0r9bt250xt atc r1, r2 2.2 ? , 1/4 w chip resistors crcw12062r20jnea vishay r3 50 ? , 10 w chip resistor cw12010t0050gbk atc z1 1700--2000 mhz band 90 ? , 5 db directional coupler x3c19p1--05s anaren pcb rogers ro4350b, 0.020 ? , ? r =3.66 d55813 mtl
14 rf device data freescale semiconductor, inc. aft18h357--24sr6 typical characteris tics ? 1930?1995 mhz 1880 acpr f, frequency (mhz) figure 25. single--carrier output peak--to--average ratio compression (parc) broa dband performance @ p out = 63 watts avg. -- 2 . 5 -- 2 . 1 -- 2 . 2 -- 2 . 3 -- 2 . 4 16.5 17.5 17.4 17.3 -- 4 0 51 50.5 50 49.5 -- 3 0 -- 3 2 -- 3 4 -- 3 6 ? d , drain efficiency (%) ? d g ps , power gain (db) 17.2 17.1 17 16.9 16.8 16.7 16.6 1900 1920 1940 1960 1980 2000 2020 2040 49 -- 3 8 -- 2 . 6 acpr (dbc) parc g ps 1 acpr p out , output power (watts) avg. figure 26. single--carrier w--cdma power gain, drain efficiency and acpr versus output power -- 2 0 -- 3 0 10 22 0 60 50 40 30 20 ? d , drain efficiency (%) ? d g ps , power gain (db) 20 18 10 100 400 10 -- 7 0 acpr (dbc) 16 14 12 -- 1 0 -- 4 0 -- 5 0 -- 6 0 figure 27. broadband frequency response 8 20 f, frequency (mhz) 16 14 12 gain (db) 18 10 1660 1750 1840 1930 2020 2110 2200 2290 gain 1960 mhz v dd =28vdc,i dqa = 800 ma v gsb =0.4vdc single--carrier w--cdma 1930 mhz 1995 mhz g ps 1930 mhz 1995 mhz 1960 mhz 1930 mhz 1960 mhz 1995 mhz v dd =28vdc p in =0dbm i dqa = 800 ma v gsb =0.4vdc parc (db) v dd =28vdc,p out =63w(avg.)i dqa = 800 ma v gsb = 0.4 vdc, single--carrier w--cdma, 3.84 mhz channel bandwidth, input signal par = 9.9 db @ 0.01% pr obabilit y on ccdf 3.84 mhz channel bandwidth input signal par = 9.9 db @ 0.01%= pr obabilit y on ccdf
aft18h357--24sr6 15 rf device data freescale semiconductor, inc. table 11. carrier side load pull performance ? maximum power tuning v dd =28vdc,i dqa = 790 ma , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max output power p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1930 2.31 - j4.08 2.36 + j4.20 1.63 - j4.80 19.5 51.7 149 55.4 -11 1960 2.73 - j4.53 2.83 + j4.49 1.63 - j4.87 19.4 51.7 149 55.2 -11 1995 3.52 - j4.43 3.64 + j4.64 1.72 - j5.06 19.5 51.6 146 54.0 -11 f (mhz) z source ( ? ) z in ( ? ) max output power p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1930 2.31 - j4.08 2.34 + j4.60 1.62 - j5.05 17.2 52.5 178 56.1 -16 1960 2.73 - j4.53 2.89 + j4.97 1.66 - j5.16 17.2 52.5 177 55.7 -17 1995 3.52 - j4.43 3.88 + j5.20 1.76 - j5.34 17.2 52.4 173 54.7 -16 (1) load impedance for optimum p1db power. (2) load impedance for optimum p3db power. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. table 12. carrier side load pull performance ? maximum drain efficiency tuning v dd =28vdc,i dqa = 790 ma , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1930 2.31 - j4.08 2.25 + j4.31 2.94 - j3.26 22.0 49.9 98 65.8 -16 1960 2.73 - j4.53 2.72 + j4.60 2.87 - j3.27 22.0 49.8 95 65.4 -17 1995 3.52 - j4.43 3.52 + j4.76 2.89 - j3.42 22.1 49.7 94 63.6 -15 f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1930 2.31 - j4.08 2.15 + j4.68 2.61 - j3.08 20.0 50.5 112 66.1 -26 1960 2.73 - j4.53 2.68 + j5.07 2.58 - j3.15 20.0 50.5 111 65.7 -26 1995 3.52 - j4.43 3.62 + j5.39 2.37 - j3.33 20.0 50.6 114 64.8 -25 (1) load impedance for optimum p1db efficiency. (2) load impedance for optimum p3db efficiency. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. input load pull tuner and test circuit device under test z source z in z load output load pull tuner and test circuit
16 rf device data freescale semiconductor, inc. aft18h357--24sr6 table 13. peaking side load pull performance ? maximum power tuning v dd =28vdc,v gsb =0.8vdc , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max output power p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1930 2.31 - j4.08 2.00 + j4.23 2.28 - j4.89 16.1 54.1 256 57.5 -30 1960 3.28 - j4.32 2.69 + j4.66 2.54 - j5.11 16.1 54.1 255 57.7 -30 1995 4.55 - j4.25 4.00 + j4.92 2.87 - j5.40 16.1 54.0 250 56.3 -30 f (mhz) z source ( ? ) z in ( ? ) max output power p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1930 2.31 - j4.08 2.23 + j4.52 2.54 - j5.29 13.9 54.7 297 57.6 -36 1960 3.28 - j4.32 3.08 + j4.97 2.79 - j5.46 13.9 54.7 296 57.5 -37 1995 4.55 - j4.25 4.73 + j5.11 3.20 - j5.65 14.0 54.6 291 57.0 -37 (1) load impedance for optimum p1db power. (2) load impedance for optimum p3db power. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. table 14. peaking side load pull performance ? maximum drain efficiency tuning v dd =28vdc,v gsb =0.8vdc , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1930 2.31 - j4.08 1.66 + j4.17 2.85 - j2.12 17.5 52.1 162 70.7 -37 1960 3.28 - j4.32 2.17 + j4.63 2.67 - j1.93 17.3 51.7 149 70.6 -39 1995 4.55 - j4.25 3.29 + j5.06 2.76 - j2.21 17.4 51.9 157 69.8 -37 f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1930 2.31 - j4.08 1.95 + j4.48 3.18 - j2.71 15.3 53.2 208 70.0 -45 1960 3.28 - j4.32 2.69 + j4.98 3.13 - j2.72 15.3 53.2 207 69.8 -45 1995 4.55 - j4.25 4.09 + j5.32 2.90 - j2.56 15.4 52.8 191 69.0 -47 (1) load impedance for optimum p1db efficiency. (2) load impedance for optimum p3db efficiency. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. input load pull tuner and test circuit device under test z source z in z load output load pull tuner and test circuit
aft18h357--24sr6 17 rf device data freescale semiconductor, inc. p1db -- typical carrier side load pull contours ? 1960 mhz -- 7 -- 1 -- 2 imaginary ( ? ) 22.5 16 -- 3 4.5 1.5 -- 4 -- 5 3.5 4 3 -- 6 55.5 -- 7 -- 1 -- 2 imaginary ( ? ) 22.5 16 -- 3 4.5 1.5 -- 4 -- 5 3.5 4 3 -- 6 55.5 -- 7 -- 1 -- 2 imaginary ( ? ) 22.5 16 -- 3 4.5 1.5 -- 4 -- 5 3.5 4 3 -- 6 55.5 note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 28. p1db load pull output power contours (dbm) real ( ? ) -- 7 -- 1 -- 2 imaginary ( ? ) 22.5 16 -- 3 4.5 1.5 figure 29. p1db load pull efficiency contours (%) real ( ? ) figure 30. p1db load pull gain contours (db) real ( ? ) -- 4 -- 5 3.5 4 3 -- 6 55.5 figure 31. p1db load pull am/pm contours ( ? ) real ( ? ) p 48 49.5 50 47.5 51 51.5 e 48.5 49 50.5 58 56 54 52 e p 62 64 e p -- 1 2 -- 1 6 -- 1 8 -- 2 0 -- 2 4 -- 1 0 -- 1 4 -- 2 2 p e 19.5 20 20.5 21 21.5 22 22.5 23 50 19 50 60
18 rf device data freescale semiconductor, inc. aft18h357--24sr6 p3db -- typical carrier side load pull contours ? 1960 mhz -- 7 -- 1 -- 2 imaginary ( ? ) 22.5 16 -- 3 4.5 1.5 -- 4 -- 5 3.5 4 3 -- 6 55.5 -- 7 -- 1 -- 2 imaginary ( ? ) 22.5 16 -- 3 4.5 1.5 -- 4 -- 5 3.5 4 3 -- 6 55.5 -- 7 -- 1 -- 2 imaginary ( ? ) 22.5 16 -- 3 4.5 1.5 -- 4 -- 5 3.5 4 3 -- 6 55.5 note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 32. p3db load pull output power contours (dbm) real ( ? ) -- 7 -- 1 -- 2 imaginary ( ? ) 22.5 16 -- 3 4.5 1.5 figure 33. p3db load pull efficiency contours (%) real ( ? ) figure 34. p3db load pull gain contours (db) real ( ? ) -- 4 -- 5 3.5 4 3 -- 6 55.5 figure 35. p3db load pull am/pm contours ( ? ) real ( ? ) e p 48.5 49 49.5 50 50.5 51 51.5 52 60 58 54 52 62 56 64 e p -- 1 4 -- 1 6 -- 1 8 -- 2 0 -- 2 4 -- 2 6 -- 2 2 -- 2 8 -- 3 0 17 17.5 18 18.5 19 19.5 20 20.5 21 e p e p 51 50
aft18h357--24sr6 19 rf device data freescale semiconductor, inc. p1db -- typical peaking side load pull contours ? 1960 mhz imaginary ( ? )imaginary( ? ) note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 36. p1db load pull output power contours (dbm) real ( ? ) -- 8 0 -- 2 imaginary ( ? ) 2 17 -- 3 figure 37. p1db load pull efficiency contours (%) real ( ? ) figure 38. p1db load pull gain contours (db) real ( ? ) -- 4 -- 5 4 3 -- 6 5 figure 39. p1db load pull am/pm contours ( ? ) real ( ? ) 6 -- 1 -- 7 -- 8 0 -- 2 2 17 -- 3 -- 4 -- 5 4 3 -- 6 56 -- 1 -- 7 -- 8 0 -- 2 2 17 -- 3 -- 4 -- 5 4 3 -- 6 56 -- 1 -- 7 -- 8 0 -- 2 2 17 -- 3 -- 4 -- 5 4 3 -- 6 56 -- 1 -- 7 e p 50 51 51.5 e 50.5 p e p e 52 52.5 53 53.5 53 52 52.5 54 60 58 56 54 62 64 66 p e 70 68 13.5 14 14.5 15 15.5 16 16.5 17 16 -- 2 8 -- 3 0 -- 3 2 -- 3 4 -- 3 6 -- 3 8 -- 4 0 -- 4 2 imaginary ( ? )
20 rf device data freescale semiconductor, inc. aft18h357--24sr6 p3db -- typical peaking side load pull contours ? 1960 mhz 22.5 16 4.5 1.5 3.5 4 3 55.5 -- 8 -- 1 -- 2 -- 3 -- 4 -- 5 -- 6 -- 7 22.5 16 4.5 1.5 3.5 4 3 55.5 -- 8 -- 1 -- 2 -- 3 -- 4 -- 5 -- 6 -- 7 22.5 16 4.5 1.5 3.5 4 3 55.5 -- 8 -- 1 -- 2 -- 3 -- 4 -- 5 -- 6 -- 7 22.5 16 4.5 1.5 3.5 4 3 55.5 imaginary ( ? )imaginary( ? ) note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 40. p3db load pull output power contours (dbm) real ( ? ) -- 8 -- 1 -- 2 imaginary ( ? ) -- 3 figure 41. p3db load pull efficiency contours (%) real ( ? ) figure 42. p3db load pull gain contours (db) real ( ? ) -- 4 -- 5 -- 6 figure 43. p3db load pull am/pm contours ( ? ) real ( ? ) -- 7 p 53 52 54.5 51 51.5 e 53.5 54 50.5 52.5 60 58 56 68 e p 62 64 66 54 e p -- 3 4 p e 11.5 12 12.5 13 13.5 14 14.5 15 -- 3 6 -- 3 8 -- 4 0 -- 4 2 -- 4 4 -- 4 6 -- 4 8 -- 5 0 imaginary ( ? ) 52.5 52.5 53 53.5
aft18h357--24sr6 21 rf device data freescale semiconductor, inc. package dimensions
22 rf device data freescale semiconductor, inc. aft18h357--24sr6
aft18h357--24sr6 23 rf device data freescale semiconductor, inc. product documentation, software and tools refer to the following resources to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file development tools ? printed circuit boards for software and tools, do a part number search at http://www.fr eescale.com, and select the ?part number? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 0 mar. 2014 ? initial release of data sheet
24 rf device data freescale semiconductor, inc. aft18h357--24sr6 information in this document is provided solely to enable system and software implementers to use freescale products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. freescale reserves the right to make changes without further notice to any products herein. freescale makes no warranty, representation, or guarantee regarding the suitability of its products fo r any particular purpose, nor does freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all li ability, including without limit ation consequential or incidental damages. ?typical? parameters that may be provided in freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/salestermsandconditions. freescale and the freescale logo are trademarks of freescale semiconductor, inc., reg. u.s. pat. & tm. off. airfast is a trademark of freescale semiconductor, inc. all other product or service names are the property of their respective owners. e 2014 freescale semiconductor, inc. how to reach us: home page: freescale.com web support: freescale.com/support document number: aft18h357--24s rev. 0, 3/2014

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